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TGA8310-SCC
Low-Noise Amplifier
q q q q q q
PHOTO ENLARGEMENT
2 to 20- GHz Frequency Range 3.5- dB Noise Figur e Midband 1.4:1 Typical Input/Output SWR
8310
17.5- dBm Output Power at 1- dB Gain Compr ession 9- dB Typical Gain 4,115 x 2,362 x 0,102 mm (0.162 x 0.093 x 0.004 in.)
DESCRIPTION
The TriQuint TGA8310 - SCC is a monolithic low - noise distributed amplifier, which operates from 2 to 20- GHz. Noise figure is typically 4 - dB. Nine 122- m gatewidth FETs typically provide 17.5-dBm of output power at 1 - dB gain compression and 9- dB typical small signal gain. Typical input return loss is 17-dB from 2 to 20-GHz. Typical output return loss is 20-dB. Ground is provided to the circuitry through vias to the backside metallization. The TGA8310 - SCC low - noise distributed amplifier is suitable for a variety of wide - band electronic warfare systems such as radar warning receivers, electronic counter-measures, decoys, jammers, and phased array systems. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the ther mocompression and thermosonic wir e- bonding processes. The TGA8310 - SCC is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
TGA8310-SCC
TYPICAL SMALL-SIGNAL POWER GAIN
14 12 10
VCTRL = 1.5 V V = 1.5 V = I +CTRL 60 mA I + = 60 mA TA = 25 C T = 25C
A
Gain (dB)
8 6 4
2 0
2 4 6 8 10 12 14 16 18 20
VVD = 5 V D = 5V V Vd = 5 = 8V VV++ = 8 V V+ = 8 V
Frequency (GHz)
y TYPICAL NOISE FIGURE
8 7
6
g
VCTRL = 1.5 V VCTRL = 1.5 V II+ +==60 mA 60 mA TAA = 25C T 25 C
Noise Figure (dB)
5 4 3 2 1 0 2 4 6 8 10 12 14 16 18
Vd = 5VVV VD = 5 Vd = 5
V+ = 8 V+ = 8 V V + = 8V V
Frequency (GHz)
TYPICAL OUTPUT POWER
22
P1dB
Output Power (dBm)
20
18
VCTRL = 1.5 V VCTRL = 1.5 V I + +==60 mA 60 mA I TT A= 25C A = 25 C
16
14 12
VdD== 5 V V 5V Vd = 5 V V+ V + ==8V V V+ = 88 V
10 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
2
TGA8310-SCC
TYPICAL INPUT RETURN LOSS Input Return Loss (dB)
0
6 12
VCTRL = 1.5 VCTRL = 1.5 VV I + = 60 mA I + = 60 mA TA = 25 C = 25C
18 24
30 36 2 5 8 11 14 17 20
V=5V VdD = 5 V V=8V V+ + = 8 V
Frequency (GHz)
TYPICAL OUTPUT RETURN LOSS Output Return Loss (dB)
0 6 12 18
24 30 36 42 2 5 8 11 14 17 20
VCTRL = 1.5 V V+ = 1.5 V CTRL I + = 60 mA I = 60 mA 25C T T AA==25 C
VD = Vd = 55VV V+ = V V+ = 88 V
Frequency (GHz)
3
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
TGA8310-SCC
ABSOLUTE MAXIMUM RATINGS
Drain supply voltage, VD ........................................................................................................................ 9 V Positive supply voltage, V + .................................................................................................................. 12 V Positive supply voltage range with respect to negative supply voltage, V + - VG1 .............................. 0 V to 13 V Positive supply voltage range with respect to gain control voltage, VCTR L - V + .............................. 0 V to -13 V
Negative supply voltage range, VG1 .............................................................................................. - 5 V to 0 V Gain control voltage range, V CTRL ............................................................ ................................... . - 5 V to 4 V IDSS
Drain supply current, I D ........................................................................................................................
Positive supply current, I+ .............................................................................................................. 188 mA Power dissipation, PD, at (or below) 25 C base-plate temperature* ...................................................... 2.6 W Input continuous wave power, PIN ............................................................ ....................................... . 23 dBm
Operating channel temperature, T CH** .............................................................................................. 150 C Mounting temperatur e (30 sec), TM .................................................................................................... 320 C Storage temperatur e range, TSTG ............................................................................................ - 65 to 150 C
Ratings over operating channel temperature range, T CH (unless otherwise noted)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may af fect device reliability. * For operation above 25 C base - plate temperature, derate linearly at the rate of 5.5 mW/ C. **Operating channel temperature directly affects the device MTTF . For maximum life, it is recommended that channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
4
TGA8310-SCC
TYPICAL S -PARAMETERS
Frequency (GHz) MAG
S 11 ANG() MAG
S 21 ANG() MAG
S 12 ANG() MAG
S 22 ANG()
GAIN (dB)
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0
0.31 0.26 0.21 0.18 0.15 0.12 0.10 0.08 0.07 0.07 0.08 0.10 0.12 0.13 0.14 0.14 0.14 0.14 0.12 0.11 0.08 0.07 0.06 0.07 0.09 0.11 0.12 0.12 0.13 0.14 0.12 0.09 0.08 0.07 0.04 0.04 0.03
-154 -175 169 155 145 137 134 135 143 153 162 162 157 152 145 137 127 116 109 100 99 107 128 147 150 144 130 121 112 99 87 81 95 79 88 92 86
3.32 3.23 3.13 3.06 3.00 2.97 2.93 2.93 2.92 2.93 2.94 2.95 2.91 2.90 2.85 2.83 2.80 2.77 2.80 2.80 2.80 2.80 2.79 2.79 2.77 2.74 2.73 2.70 2.65 2.66 2.70 2.71 2.61 2.68 2.67 2.65 2.64
119 96 75 54 35 16 -3 -22 -41 -60 -79 -99 -118 -138 -157 -176 165 146 127 107 88 68 48 28 8 -13 -33 -54 -74 -94 -115 -138 -159 -180 156 133 110
0.009 0.010 0.011 0.012 0.013 0.014 0.014 0.016 0.018 0.019 0.021 0.022 0.024 0.025 0.027 0.028 0.029 0.029 0.032 0.032 0.033 0.035 0.035 0.037 0.038 0.039 0.041 0.044 0.046 0.049 0.052 0.056 0.053 0.056 0.058 0.054 0.051
61 32 14 -6 -23 -42 -59 -76 -96 -115 -133 -153 -170 173 156 140 123 109 89 73 56 37 18 0 -21 -41 -58 -76 -96 -115 -134 -155 -175 168 142 119 102
0.22 0.19 0.17 0.16 0.14 0.12 0.10 0.07 0.04 0.02 0.02 0.04 0.05 0.05 0.05 0.05 0.05 0.06 0.07 0.08 0.08 0.07 0.05 0.03 0.04 0.08 0.12 0.16 0.18 0.18 0.16 0.13 0.08 0.13 0.24 0.37 0.34
-19 -62 -98 -132 -162 169 143 116 87 44 -92 -143 -170 164 133 95 52 17 -25 -54 -82 -109 -141 153 53 13 -14 -42 -70 -99 -131 -166 145 57 -25 -87 -149
10.4 10.2 9.9 9.7 9.6 9.4 9.3 9.3 9.3 9.3 9.4 9.4 9.3 9.2 9.1 9.1 8.9 8.8 8.9 9.0 8.9 8.9 8.9 8.9 8.8 8.7 8.7 8.6 8.5 8.5 8.6 8.7 8.3 8.6 8.5 8.5 8.4
TA = 25C, VD = 5 V, VCTRL = 1.5 V I + = 60 mA ,
Reference planes for S -parameter data include bond wires as specified in the "Recommended Assembly Diagram." The S -parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
5
TGA8310-SCC
TYPICAL S -PARAMETERS
Frequency (GHz) MAG
S 11 ANG() MAG
S 21 ANG() MAG
S 12 ANG() MAG
S 22 ANG()
GAIN (dB)
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0
0.28 0.23 0.20 0.17 0.14 0.11 0.08 0.06 0.06 0.06 0.08 0.09 0.12 0.13 0.15 0.15 0.14 0.13 0.11 0.08 0.06 0.04 0.03 0.05 0.06 0.08 0.10 0.10 0.09 0.09 0.08 0.06 0.06 0.09 0.10 0.13 0.15
-155 -178 165 151 140 133 132 138 154 166 165 165 160 154 148 141 131 122 112 105 105 115 147 163 161 150 133 116 103 90 65 45 81 63 72 85 96
2.76 2.75 2.74 2.77 2.79 2.83 2.84 2.87 2.88 2.90 2.88 2.91 2.88 2.87 2.84 2.81 2.78 2.76 2.78 2.79 2.76 2.77 2.76 2.76 2.75 2.74 2.72 2.71 2.60 2.54 2.52 2.49 2.39 2.50 2.45 2.34 2.20
108 90 72 53 35 16 -3 -22 -41 -60 -79 -98 -118 -137 -157 -176 165 146 128 108 88 69 49 29 8 -12 -33 -54 -76 -96 -117 -139 -158 -179 158 133 110
0.007 0.008 0.010 0.011 0.012 0.013 0.015 0.016 0.018 0.019 0.021 0.022 0.024 0.026 0.027 0.028 0.029 0.030 0.031 0.032 0.032 0.033 0.034 0.035 0.037 0.039 0.040 0.042 0.043 0.046 0.048 0.050 0.047 0.051 0.054 0.053 0.053
37 19 4 -12 -28 -45 -63 -80 -99 -117 -136 -152 -171 172 156 140 124 104 91 73 55 38 20 1 -19 -39 -59 -78 -96 -112 -131 -151 -170 177 155 132 112
0.12 0.08 0.05 0.04 0.04 0.05 0.05 0.04 0.03 0.03 0.04 0.05 0.06 0.05 0.05 0.06 0.07 0.06 0.07 0.06 0.06 0.05 0.05 0.04 0.02 0.01 0.01 0.03 0.06 0.07 0.09 0.11 0.13 0.12 0.12 0.15 0.21
-133 -152 180 134 86 55 32 8 -28 -82 -128 -157 173 143 111 79 52 27 1 -29 -58 -85 -113 -147 -173 163 -17 -37 -60 -76 -91 -112 -129 -138 -135 -120 -118
8.8 8.8 8.8 8.8 8.9 9.0 9.1 9.2 9.2 9.2 9.2 9.3 9.2 9.2 9.1 9.0 8.9 8.8 8.9 8.9 8.8 8.9 8.8 8.8 8.8 8.7 8.7 8.7 8.3 8.1 8.0 7.9 7.6 8.0 7.8 7.4 6.8
TA = 25C, V + = 8 V, VCTRL = 1.5 V, I + = 60 mA
Reference planes for S -parameter data include bond wires as specified in the " Recommended Assembly Diagram." -
6
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
TGA8310-SCC
RF CHARACTERISTICS
GP
PARAMETER
TEST CONDITIONS
TYP
UNIT
Small-signal power gain
f = 2 t o 20 GHz f = 2 GHz f = 6 GHz
VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V
9.0 8.5 4.6 4.4 2.7 2.5 3.1 3.2 5.6 5.4 1.4:1 1.4:1 1.4:1 1.4:1 17.5 16.5 29.5 27.0 27.5 26.5 27.0 32.5 29.5 29.0 28.0 -29.0
dB
NF
Noise figure f = 10 GHz f = 18 GHz
dB
SWR(in) Input standing wave ratio SWR(out) Output standing wave ratio P 1dB Output power at 1-dB gain compression
f = 2 to 20 GHz f = 2 to 20 GHz f = 2 to 20 GHz f = 2 G Hz f = 6 G Hz
--dBm
IP3
Output third-order intercept point
f = 9 GHz f = 1 2 G Hz f = 1 8 G Hz f o = 2 GHz f o = 4 GHz f o = 6 GHz f o = 9 GHz f o = 2 GHz f o = 4 GHz fo = 6 GHz fo fo fo fo
I+
VD = 5 V
dBm
Output second-order intercept point
VD = 5 V
dBm
Output third harmonic at 1-dB gain compression
VD = 5 V
Output second harmonic at 1-dB gain compression
= 2 GHz = 4 GHz = 6 GHz = 9 GHz
VD = 5 V
-24.5 -19.5 -18.0 -15.0 -13.5 -15.5
dBc*
dBc*
VD = 5 V, VCTRL = 1.5 V,
= 60 mA, TA = 25C
* Unit dBc applies to decibels with r espect to the carrier or fundamental fr equency fo. ,
DC CHARACTERISTICS
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
I DSS Zero-gate-voltage drain current at saturation
VDS = 0.5 V to 3.5 V, VGS = 0
97
292
mA
TA = 25C
VDS for I DSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at dc autoprobe.
THERMAL INFORMATION
R
JC
PARAMETER
TEST CONDITIONS
NOM
UNIT
Thermal resistance (channel to backside)
V CTRL = 1.5 V, I + = 60 mA
V+ = 8 V VD = 5 V
12 20
C/W
7
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
TGA8310-SCC
EQUIVALENT SCHEMATIC
V+ VCTRL
VD
122 m 9 places
RF Output
RF Input
VG1
TYPICAL BIAS NETWORK
V += 8 V CBypass
V CT RL = 1 . 5 V CBypass
5 3 RF Input 1,2
TGA8310
6,7
RF Output
8
VG1 CBypass
(V+ = 8 V)
TYPICAL BIAS NETWORK
V D= 5 V CBypass LBias 4
V CT RL = 1 . 5 V CBypass
3 RF Input 1,2
TGA8310
6,7
RF Output
8
VG1 CBypass
(VD = 5 V)
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
8
TGA8310-SCC
RECOMMENDED ASSEMBLY DIAGRAM
8 Volt Bias
VCTRL 100pF 0.01 F V+
RF Input
RF Output
100pF
VG1
(V + = 8 V)
RF connections: Bond using two 1 -mil diameter, 20 to 25 -mil length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of exter nal components is essential to stability.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
9
TGA8310-SCC
RECOMMENDED ASSEMBLY DIAGRAM
5 Volt Bias
VCTRL 100pF 2nH 0.01 F VD
RF Input
RF Output
100pF
VG1
(VD = 5 V)
The 2 -nH thin -film network coil is TI par t number 3022039 -1. RF connections: Bond using two 1 -mil diameter, 20 to 25 -mil length gold bond wires at both RF Input and RF Output for optimum RF per formance. Close placement of exter nal components is essential to stability.
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
10
TGA8310-SCC
MECHANICAL DRAWING
2,3622 (0.0930)
0,1524 (0.0060)
0,5944 (0.0234)
1,7170 (0.0676)
3,9746 (0.1564)
5
1,9456 (0.0766)
1,7882 (0.0704)
4
1,2370 (0.0487) 0,9423 (0.0371) 0,7264 (0.0286)
3
2 1
6 7
0,9119 (0.0359) 0,6960 (0.0274)
8
0,2515 (0.0099)
0 0 0,1397 (0.0055) 2,4155 (0.0951) 4,1148 (0.1620)
Units: millimeters (inches) Thickness: 0,1016 (0.004) (r eference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size 0,0508 (0.002) Bond Bond Bond Bond Bond Bond Bond Bond pad pad pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 #7 #8 (RF Input): (RF Input): (VCTRL): (VD): (V +): (RF Output): (RF Output): (VG1): 0,0940 x 0,0991 (0.0037 x 0.0039) 0,0940 x 0,0991 (0.0037 x 0.0039) 0,1016 x 0,1524 (0.0040 x 0.0060) 0,1321 x 0,2108 (0.0052 x 0.0083) 0,2032 x 0,1016 (0.0080 x 0.0040) 0,0940 x 0,0991 (0.0037 x 0.0039) 0,0940 x 0,0991 (0.0037 x 0.0039) 0,0965 x 0,0965 (0.0038 x 0.0038)
TriQuint Semiconductor, Inc.
*
Texas Facilities
* (972) 995-8465
* www.triquint.com
11

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